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The results of the PA Competition are:

#	Name	Affiliation	Score
1	Junghwan Moon and Juyeon Lee	Pohang University of Science and Technology (POSTECH),	109.16
2	Junghwan Moon and Juyeon Lee	Pohang University of Science and Technology (POSTECH), Republic of Korea	108.31
3	Sergej Werner, Dimitri Pozdniakov, Danish Kalim	UMIC Research Center, RWTH Aachen University, Aachen, Germany	103.76
4	Kenle Chen	School of Electrical and Computer Engineering, Purdue University, USA	103.31
5	Kenle Chen	School of Electrical and Computer Engineering, Purdue University, USA	102.05
6	Zhebin Wang, Shengjie Gao, Fathi Nasri	University of Quebec in Rimouski, department of Electrical Engineering	91.32
7	Qi Lei, Lei Dong, Zhebin Hu, Weixing Zhao, Bing Du,Xuan Ding,Shuyi Xie	UESTC (University of Electronic Science and Technology of China)	87.61
8	Sergio Di Falco	University of Ferrara, Via Saragat 1, 44122 Ferrara, Italy	85.36
9	Qi Lei, Lei Dong, Zhebin Hu, Weixing Zhao, Bing Du,Xuan Ding,Shuyi Xie	UESTC (University of Electronic Science and Technology of China)	83.63
10	Olaf Ismael Gómez Pichardo	CINVESTAV-IPN Guadalajara, Jalisco, Mexico	54.87

The detailed contest results are available as an Excel file from this link.

 

MTT-5 (High Power Amplifier Components) is pleased to announce the Seventh High Efficiency Power Amplifier Competition, which will take place at the 2011 IEEE MTT-S International Microwave Symposium (IMS).

This competition is open to all students and graduate students registered at an educational establishment. The competitors are required to design, construct, and measure a high efficiency power amplifer at a frequency of their choice above 1 GHz but less than 20 GHz, and having an output power level of at least 5 watts but less than 100 watts. The winner will be judged on the design, which demonstrates the highest power added efficiency (PAE). A representive of the design group must be present at the testing to assist with the evaluation. The winner will receive a prize of $1,000, and will be invited to submit a paper describing the design for the MTT Microwaves Magazine. Modelithics and AWR will also give software awards to the top 3 PA teams.

PA Competition Rules:

1. The power amplifier (PA) design may use any type of technology, but must be the result of student effort both in the amplifier design and fabrication.
2. The PA mechanical design should allow for internal inspection of all relevant components and circuit elements. The RF ports should be SMA female connectors. Bias connections should be banana plugs. Only two DC power sources are allowed.
3. The PA must operate at a frequency of greater than 1 GHz but less then 20 GHz, and have an output power level of at least 5 watts but less than 100 watts.
4. All amplifiers should require less than 25 dBm of input power to reach the output level required for maximum efficiency.
5. Amplifier entries should be submitted with measured data, including dc supply requirements, frequency, RF drive and output power, and PAE. PAE will be defined as (RFout-RFin)/dc. Measurements will be under CW operation at room ambient conditions into a 50 ohm load. Only the power at the fundamental CW frequency will be included in the measurement of output power.
6. The winner will be based on the amplifier's PAE measured during official testing, multiplied by a frequency weighting factor having the form (GHz)1/4. Award certificates will be presented at the Student Award Luncheon. The decision of the judges will be final.
7. Contestants must notify the MTT-S committee by e-mailing to Dr. Kiki lkossi of their intention to compete in the contest before April 1, 2011. This notification should include information on the University or educational affiliation of the entry, and the PA's approximate power level, dc voltage requirements and frequency of operation. Dr. lkossi can also provide assistance in obtaining device samples.

Questions can be sent to Dr. Kiki lkossi at ikossi@ieee.org.